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MBR3040PT中文资料

D S 23017 Rev. E-2 1 of 2 MBR3030PT - MBR3060PT

MBR3030PT - MBR3060PT

30A SCHOTTKY BARRIER RECTIFIER

MBR3040PT中文资料

Features

A B

E

G

J L

M

N

P**2Places

Q

K S M

H

R D

C TO-3P

Dim Min Max A 3.20 3.50B 4.59 5.16C 20.8021.30D 19.7020.20E

2.10 2.40G 0.510.76H 15.9016.40J 1.70 2.70K

3.10Æ 3.30ÆL 3.50

4.51M

5.20 5.70N 1.12 1.22P 1.93 2.18Q 2.97 3.22R 11.70

12.80

S

4.30 Typical

All Dimensions in mm

Maximum Ratings and Electrical Characteristics

@ T A = 25°C unless otherwise specified

·Schottky Barrier Chip

·Guard Ring Die Construction for Transient Protection

·Low Power Loss, High Efficiency ·High Surge Capability

·High Current Capability and Low Forward Voltage Drop

·For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications

·

Plastic Material: UL Flammability Classification Rating 94V-0

Mechanical Data

·Case: Molded Plastic

·Terminals: Plated Leads Solderable per MIL-STD-202, Method 208·Polarity: As Marked on Body ·Marking: Type Number

·Weight: 5.6 grams (approx.)·

Mounting Position: Any

Single phase, half wave, 60Hz, resistive or inductive load.For capacitive load, derate current by 20%.

Characteristic

Symbol MBR 3030PT MBR 3035PT MBR 3040PT MBR 3045PT

MBR3040PT中文资料

MBR 3050PT MBR 3060PT Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage V RRM V RWM V R 303540455060V RMS Reverse Voltage

V R(RMS)

21

24.5

28

31.5

35

42

V Average Rectified Output Current

@ T C = 125°C

(Note 1)

I O 30

A Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on rated load (JEDEC Method)I FSM 200

A

Forward Voltage Drop @ I F = 20A, T C = 25°C per element (Note 3)

@ I F = 20A, T C = 125°C

V FM 0.650.600.750.65V Peak Reverse Current @ T C = 25°C at Rated DC Blocking Voltage, per element @ T C = 125°C I RM 1.060

5.0100

mA Typical Junction Capacitance

(Note 2)C j 700

pF Typical Thermal Resistance Junction to Case (Note 1)

R q Jc 1.4

2.0K/W Voltage Rate of Change (Rated V R )dV/dt 10,000V/µs Operating and Storage Temperature Range T j,T STG

-65 to +150

°C

Notes:

1. Thermal resistance junction to case mounted on heatsink.

2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.

3. Pulse width £300m s, duty cycle £2%.

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